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InP-based High Electron Mobility Transistors (InP HEMTs) exhibit a record current-gain cutoff frequency of beyond 500 GHz and an ultra low noise figure of less than 2 dB even at 100 GHz. Consequently, they are regarded as key devices for next-generation wired/wireless communication systems and precision sensors. This paper describes some fabrication techniques that enhance device uniformity for large-scale integration and provide the frequency response required for high-speed operation. It then describes two sensors that have been developed using InP HEMTs: a 94-GHz-band passive image sensor and an Ultra-WideBand (UWB) radar operating in the quasi-millimeter waveband of 23 to 29 GHz.

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Format:PDFSize:550 KB
Date:Oct 2007
Pages:9

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