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Overview:

The linearity of a Silicon-Germanium (SiGe) HBT Power Amplifier (PA) is analyzed with the help of a power-dependent coefficient Volterra technique. The effect of emitter inductance is included and the dominant sources of nonlinearity are identified. A dynamic current biasing technique is developed to improve the average power efficiency for Wide-band Code-Division Multiple-Access (WCDMA) PAs. The average power efficiency is improved by more than a factor of two compared to a typical class-AB operation, while the power gain keeps roughly constant.

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Format:PDFSize:695 KB
Date:Feb 2005
Pages:9

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